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SiC Via Hole Etching


Details:

A SAMCO ICP Etching System created a 50μm diameter via hole on a SiC GaN-HEMT device from the back side of SiC substrate. The top of the via hole was tapered for easy electrode formation.
SiC via hole etching requires a high etch rate, low damage, and low temperature. The SiC substrate is glued onto a carrier wafer, using electron wax and is processed under a temperature suitable to the electron wax. A via hole with vertical smooth sidewalls was obtained at an etch rate of 1.3μm/min while keeping the temperature below 150°C.

Processed by SAMCO RIE-200iP ICP Etching System